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aft21s230sr3 aft21s232sr3 1 rf device data freescale semiconductor, inc. rf power ldmos transistors n--channel enhancement--mode lateral mosfets these 50 watt rf power ldmos transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 mhz. ? typical single--carrier w--cdma performance: v dd =28volts, i dq = 1500 ma, p out = 50 watts avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 2110 mhz 16.7 30.5 7.2 --35.7 -- 1 9 2140 mhz 17.0 31.0 7.1 --35.4 -- 2 0 2170 mhz 17.2 31.8 7.0 --34.8 -- 1 5 features ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? optimized for doherty applications ? ni--780s--6: r3 suffix = 250 units, 44 mm tape width, 13 inch reel. ? ni--780s--2: r3 suffix = 250 units, 56 mm tape width, 13 inch reel. for r5 tape and reel options, see p. 18. figure 1. pin connections (top view) rf in /v gs 21 rf out /v ds figure 2. pin connections (top view) rf in /v gs vbw n.c. vbw 16 34 25 n.c. rf out /v ds ni--780s--6 aft21s230s ni--780s--2 aft21s232s document number: aft21s230s_232s rev. 1, 11/2012 freescale semiconductor technical data 2110--2170 mhz, 50 w avg., 28 v aft21s230sr3 aft21s232sr3 ? freescale semiconductor, inc., 2012. a ll rights reserved. ? freescale semiconductor, inc., 2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. aft21s230sr3 aft21s232sr3 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 ? c case operating temperature range t c --40 to +150 ? c operating junction temperature range (1,2) t j --40 to +225 ? c cw operation @ t c =25 ? c derate above 25 ? c cw 163 0.79 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 ? c, 50 w cw, 28 vdc, i dq = 1500 ma, 2110 mhz case temperature 86 ? c, 140 w cw (4) ,28vdc,i dq = 1500 ma, 2110 mhz r ? jc 0.43 0.38 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics gate threshold voltage (v ds =10vdc,i d = 291 ? adc) v gs(th) 1.5 2.0 2.5 vdc gate quiescent voltage (v dd =28vdc,i d = 1500 madc, measured in functional test) v gs(q) 2.2 2.7 3.2 vdc drain--source on--voltage (v gs =10vdc,i d =3.7adc) v ds(on) 0.1 0.2 0.3 vdc functional tests (5) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1500 ma, p out = 50 w avg., f = 2110 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 16.0 16.7 19.0 db drain efficiency ? d 29.0 30.5 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 6.7 7.2 ? db adjacent channel power ratio acpr ? --35.7 --34.0 dbc input return loss irl ? -- 1 9 -- 1 0 db 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. exceeds recommended operating conditions. see cw operation data in maximum ratings table. 5. part internally matched both on input and output. (continued)
aft21s230sr3 aft21s232sr3 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit load mismatch (in freescale test fixture, 50 ohm system) i dq = 1500 ma, f = 2140 mhz vswr 10:1 at 32 vdc, 269 w cw output power (3 db input overdrive from 182 w cw rated power) no device degradation typical performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1500 ma, 2110--2170 mhz bandwidth p out @ 1 db compression point, cw p1db ? 182 (1) ? w am/pm (maximum value measured at the p3db compression point across the 2110--2170 mhz bandwidth) ? ? --19.3 ? ? vbw resonance point (imd third order intermodulation inflection point) aft21s230s aft21s232s vbw res ? 95 60 ? mhz gain flatness in 60 mhz bandwidth @ p out =50wavg. g f ? 0.5 ? db gain variation over temperature (--30 ? cto+85 ? c) ? g ? 0.016 ? db/ ? c output power variation over temperature (--30 ? cto+85 ? c) (1) ? p1db ? 0.007 ? db/ ? c 1. exceeds recommended operating conditions. see cw operation data in maximum ratings table.
4 rf device data freescale semiconductor, inc. aft21s230sr3 aft21s232sr3 figure 3. aft21s230sr3(232sr3) t est circuit component layout aft21s232s/aft21s230s rev. 0 cut out area c22 c8 c10* c16* r1 r2 c9 c23 c15* c6 c7 c3 c20 c21 c14* c17 c11* c12* c18 c19 c13* c4 c5 c2 c1 *c10, c11, c12, c13, c14, c15 and c16 are mounted vertically. table 5. aft21s230sr3(232sr3) test circ uit component designations and values part description part number manufacturer c1 470 ? f, 63 v electrolytic capacitor b41694a5477q7 epcos c2, c3, c4, c5, c6, c7, c22, c23 10 ? f, 100 v chip capacitors c5750x7s2a106m tdk c8, c9, c10, c11, c12, c13, c14, c15 6.8 pf chip capacitors atc100b6r8bt500xt atc c16 0.6 pf chip capacitor atc100b0r6bt500xt atc c17 0.3 pf chip capacitor atc100b0r3bt500xt atc c18, c19, c20, c21 1 ? f, 50 v chip capacitors cdr34bx104akws avx r1, r2 8.2 ? , 1/4 w chip resistors RC1206FR--108R2L yageo pcb 0.020 ? , ? r =3.5 ro4350b rogers
aft21s230sr3 aft21s232sr3 5 rf device data freescale semiconductor, inc. typical characteristics irl, input return loss (db) 2060 g ps acpr f, frequency (mhz) figure 4. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 50 watts avg. -- 2 0 -- 4 -- 8 -- 1 2 -- 1 6 14.5 19.5 19 18.5 -- 3 7 34 33 32 31 -- 3 2 -- 3 3 -- 3 4 -- 3 5 ? d , drain efficiency (%) ? d g ps , power gain (db) 18 17.5 17 16.5 16 15.5 15 2080 2100 2120 2140 2160 2180 2200 2220 30 -- 3 6 -- 2 4 acpr (dbc) parc irl parc (db) -- 3 . 6 -- 2 -- 2 . 4 -- 2 . 8 -- 3 . 2 -- 4 v dd =28vdc,p out =50w(avg.),i dq = 1500 ma single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf figure 5a. intermodulation distortion products versus two--tone spacing ? aft21s230s two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 200 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im3--l im5--l im5--u im7--l im7--u v dd =28vdc,p out = 172 w (pep), i dq = 1500 ma two--tone measurements, (f1 + f2)/2 = center frequency of 2140 mhz 100 figure 5b. intermodulation distortion products versus two--tone spacing ? aft21s232s two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 200 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im5--l im7--l im7--u v dd =28vdc,p out = 172 w (pep), i dq = 1500 ma two--tone measurements, (f1 + f2)/2 = center frequency of 2140 mhz 100 figure 6. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) 0 -- 2 -- 4 25 1 -- 1 -- 3 output compression at 0.01% probability on ccdf (db) 10 40 55 85 10 40 35 30 25 20 15 ? d ? drain efficiency (%) -- 3 d b = 4 9 w 70 ? d acpr parc acpr (dbc) -- 5 0 -- 2 0 -- 2 5 -- 3 0 -- 4 0 -- 3 5 -- 4 5 18 g ps , power gain (db) 17.5 17 16.5 16 15.5 15 g ps -- 1 d b = 2 8 w -- 2 d b = 3 8 w -- 5 im3--l im5--u input signal par = 9.9 db @ 0.01% probabilit y on ccdf v dd =28vdc,i dq = 1500 ma, f = 2140 mhz single--carrier w--cdma 3.84 mhz channel bandwidth
6 rf device data freescale semiconductor, inc. aft21s230sr3 aft21s232sr3 typical characteristics 1 g ps acpr p out , output power (watts) avg. figure 7. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 14 20 0 60 50 40 30 20 ? d , drain efficiency (%) ? d g ps , power gain (db) 19 10 100 10 -- 6 0 acpr (dbc) 18 17 16 0 -- 3 0 -- 4 0 -- 5 0 figure 8. broadband frequency response 9 21 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 1500 ma 17 15 13 gain (db) 19 11 1800 1900 2000 2100 2200 2300 2400 2500 2600 -- 3 0 30 20 10 0 -- 1 0 irl (db) -- 2 0 gain irl 2170 mhz 2140 mhz 2110 mhz 15 200 v dd =28vdc,i dq = 1500 ma, single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf 2110 mhz 2140 mhz 2170 mhz 2110 mhz 2140 mhz 2170 mhz
aft21s230sr3 aft21s232sr3 7 rf device data freescale semiconductor, inc. v dd =28vdc,i dq = 1500 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) z load (1) ( ? ) max linear gain (db) max output power p1db p3db (dbm) (w) ? d (%) am/pm ( ? ) (dbm) (w) ? d (%) am/pm ( ? ) 2110 1.20 - j6.00 1.20 + j5.90 1.50 - j3.90 17.7 54.3 269 55.4 11 55.2 331 57.0 16 2140 1.70 - j6.40 1.50 + j6.30 1.60 - j4.00 17.7 54.3 269 55.1 10 55.2 331 56.0 15 2170 1.70 - j6.80 1.75 + j6.70 1.50 - j4.00 17.8 54.3 269 54.7 11 55.2 331 56.0 16 (1) load impedance for optimum p1db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit figure 9. load pull performance ? maximum p1db tuning v dd =28vdc,i dq = 1500 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) z load (1) ( ? ) max linear gain (db) max drain efficiency p1db p3db (dbm) (w) ? d (%) am/pm ( ? ) (dbm) (w) ? d (%) am/pm ( ? ) 2110 1.20 - j6.00 1.20 + j5.93 2.10 - j2.41 20.0 52.7 186 64.9 16 54.3 269 66.2 20 2140 1.70 - j6.40 1.40 + j6.30 1.80 - j2.60 19.8 52.8 191 64.2 16 53.4 219 65.4 24 2170 1.70 - j6.80 1.80 + j6.80 1.70 - j2.60 20.0 52.8 191 64.2 17 54.2 263 65.5 22 (1) load impedance for optimum p1db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit figure 10. load pull performance ? maximum drain efficiency tuning
8 rf device data freescale semiconductor, inc. aft21s230sr3 aft21s232sr3 p1db -- typical load pull contours ? 2140 mhz imaginary ( ? ) 1 1.5 2 2.5 0.5 3 imaginary ( ? ) 1 1.5 2 2.5 0.5 3 note: = maximum output power = maximum drain efficiency p e figure 11. p1db load pull output power contours (dbm) -- 4 . 5 -- 1 . 5 real ( ? ) -- 2 . 5 -- 3 -- 4 imaginary ( ? ) -- 2 1 1.5 2 2.5 0.5 3 figure 12. p1db load pull efficiency contours (%) real ( ? ) figure 13. p1db load pull gain contours (db) real ( ? ) figure 14. p1db load pull am/pm contours ( ? ) real ( ? ) -- 3 . 5 p e 50.5 51 50 51.5 52 53 53.5 52.5 imaginary ( ? ) 1 1.5 2 2.5 0.5 3 -- 4 . 5 -- 1 . 5 -- 2 . 5 -- 3 -- 4 -- 2 -- 3 . 5 -- 4 . 5 -- 1 . 5 -- 2 . 5 -- 3 -- 4 -- 2 -- 3 . 5 -- 4 . 5 -- 1 . 5 -- 2 . 5 -- 3 -- 4 -- 2 -- 3 . 5 p e 54 p e p e 60 62 64 60 58 56 54 52 50 48 19 19.5 18.5 18 17.5 17 16.5 16 -- 2 6 -- 2 4 -- 2 2 -- 2 0 -- 1 8 -- 1 6 -- 1 4 -- 1 2 -- 1 0 power gain drain efficiency linearity output power
aft21s230sr3 aft21s232sr3 9 rf device data freescale semiconductor, inc. p3db -- typical load pull contours ? 2140 mhz figure 15. p3db load pull output power contours (dbm) -- 4 . 5 -- 1 . 5 real ( ? ) -- 2 . 5 -- 3 -- 4 imaginary ( ? ) -- 2 1 1.5 2 2.5 3.5 3 -- 3 . 5 p e imaginary ( ? ) imaginary ( ? ) note: = maximum output power = maximum drain efficiency p e figure 16. p3db load pull efficiency contours (%) real ( ? ) figure 17. p3db load pull gain contours (db) real ( ? ) figure 18. p3db load pull am/pm contours ( ? ) real ( ? ) imaginary ( ? ) -- 4 . 5 -- 1 . 5 -- 2 . 5 -- 3 -- 4 -- 2 -- 3 . 5 -- 4 . 5 -- 1 . 5 -- 2 . 5 -- 3 -- 4 -- 2 -- 3 . 5 -- 4 . 5 -- 1 . 5 -- 2 . 5 -- 3 -- 4 -- 2 -- 3 . 5 p e p e p e 1 1.5 2 2.5 3.5 3 1 1.5 2 2.5 3.5 3 1 1.5 2 2.5 3.5 3 52 52.5 53 51 51.5 54 55 54.5 58 60 64 62 58 48 50 52 54 56 -- 3 0 -- 2 8 -- 2 6 -- 2 4 -- 2 2 -- 2 0 -- 1 8 -- 1 6 -- 1 4 17.5 17 16.5 16 15.5 15 14.5 14 power gain drain efficiency linearity output power 53.5
10 rf device data freescale semiconductor, inc. aft21s230sr3 aft21s232sr3 package dimensions
aft21s230sr3 aft21s232sr3 11 rf device data freescale semiconductor, inc.
12 rf device data freescale semiconductor, inc. aft21s230sr3 aft21s232sr3
aft21s230sr3 aft21s232sr3 13 rf device data freescale semiconductor, inc.
14 rf device data freescale semiconductor, inc. aft21s230sr3 aft21s232sr3 product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. r5 tape and reel option ni--780s--6: r5 suffix = 50 units, 44 mm tape width, 13 inch reel. ni--780s--2: r5 suffix = 50 units, 56 mm tape width, 13 inch reel. the r5 tape and reel option for aft21s230s and aft21s232s parts will be available for 2 years after release of aft21s230s and aft21s232s. freescale semiconductor, inc. rese rves the right to limit the quantities that will be delivered in the r5 tape and reel option. at the end of the 2 year period customers who have purchased this device in the r5 tape and reel option will be offered aft21s230s and aft21s232s in the r3 tape and reel option. revision history the following table summarizes revisions to this document. revision date description 0 oct. 2012 ? initial release of data sheet 1 nov. 2012 ? corrected tape and reel tape width from 32 mm to 44 mm, p. 1, 14
aft21s230sr3 aft21s232sr3 15 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale, the freescale logo, altivec, c--5, codetest, codewarrior, coldfire, c--ware, energy efficient solutions logo, kinetis, mobilegt, powerquicc, processor expert, qoriq, qorivva, starcore, symphony, and vortiqa are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast, beekit, beestack, coldfire+, corenet, flexis, magniv, mxc, platform in a package, qoriq qonverge, quicc engine, ready play, safeassure, smartmos, turbolink, vybrid, and xtrinsic are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2012 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: aft21s230s_232s rev. 1, 11/2012

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